Vishay MOSFET SI7119DN-T1-GE3

The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested