Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

£10.32

(exc. VAT)

£12.38

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 4,320 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 180£0.516£10.32
200 - 480£0.408£8.16
500 - 980£0.361£7.22
1000 - 1980£0.31£6.20
2000 +£0.258£5.16

*price indicative

Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.78mm

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

Related links