Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

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Subtotal (1 pack of 20 units)*

£10.32

(exc. VAT)

£12.38

(inc. VAT)

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Last RS stock
  • Final 4,320 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 180£0.516£10.32
200 - 480£0.408£8.16
500 - 980£0.361£7.22
1000 - 1980£0.31£6.20
2000 +£0.258£5.16

*price indicative

Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

92nC

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

COO (Country of Origin):
CN

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