Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 50 units)*

£31.35

(exc. VAT)

£37.60

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50£0.627£31.35
100 - 200£0.565£28.25
250 - 450£0.408£20.40
500 - 1200£0.376£18.80
1250 +£0.345£17.25

*price indicative

RS Stock No.:
200-6847
Mfr. Part No.:
SISS50DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

45V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

100 % Rg and UIS tested

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