Vishay TrenchFET® Gen IV N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S SISS50DN-T1-GE3

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Subtotal (1 pack of 50 units)*

£31.35

(exc. VAT)

£37.60

(inc. VAT)

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  • Shipping from 20 February 2026
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Units
Per unit
Per Pack*
50 - 50£0.627£31.35
100 - 200£0.565£28.25
250 - 450£0.408£20.40
500 - 1200£0.376£18.80
1250 +£0.345£17.25

*price indicative

RS Stock No.:
200-6847
Mfr. Part No.:
SISS50DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

45 V

Package Type

PowerPAK 1212-8S

Series

TrenchFET® Gen IV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
100 % Rg and UIS tested

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