Vishay TrenchFET® Gen IV N-Channel MOSFET, 11 A, 45 V, 4-Pin PowerPAK SO-8L SIJ150DP-T1-GE3
- RS Stock No.:
- 200-6843
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Brand:
- Vishay
Save 31% when you buy 1250 units
Subtotal (1 pack of 25 units)*
£20.80
(exc. VAT)
£24.95
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 20 February 2026
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Units | Per unit | Per Pack* |
---|---|---|
25 - 100 | £0.832 | £20.80 |
125 - 225 | £0.791 | £19.78 |
250 - 600 | £0.708 | £17.70 |
625 - 1225 | £0.666 | £16.65 |
1250 + | £0.574 | £14.35 |
*price indicative
- RS Stock No.:
- 200-6843
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 45 V | |
Package Type | PowerPAK SO-8L | |
Series | TrenchFET® Gen IV | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 0.0041 Ω, 0.00283 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 45 V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET® Gen IV | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.0041 Ω, 0.00283 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Number of Elements per Chip 1 | ||
The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low Qg and Qoss reduce power loss and improve efficiency
Flexible leads provide resilience to mechanical stress
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Very low Qg and Qoss reduce power loss and improve efficiency
Flexible leads provide resilience to mechanical stress
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
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