onsemi N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK NVB190N65S3F
- RS Stock No.:
- 195-2666
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,335.20
(exc. VAT)
£1,602.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,200 unit(s) shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.669 | £1,335.20 |
*price indicative
- RS Stock No.:
- 195-2666
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 162 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 34 @ 10 V nC | |
| Maximum Operating Temperature | +150 °C | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 4.58mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 162 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 34 @ 10 V nC | ||
Maximum Operating Temperature +150 °C | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 4.58mm | ||
Forward Diode Voltage 1.3V | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
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