N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NVB082N65S3F
- RS Stock No.:
- 186-1481
- Mfr. Part No.:
- NVB082N65S3F
- Brand:
- onsemi
799 In stock - FREE next working day delivery available
1600 In stock - FREE next working day delivery available
Price Each (In a Pack of 2)
£6.98
(exc. VAT)
£8.38
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £6.98 | £13.96 |
| 10 - 98 | £6.005 | £12.01 |
| 100 - 248 | £4.99 | £9.98 |
| 250 - 498 | £4.69 | £9.38 |
| 500 + | £4.40 | £8.80 |
*price indicative
- RS Stock No.:
- 186-1481
- Mfr. Part No.:
- NVB082N65S3F
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Non Compliant
Product Details
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 82 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 313 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V |
| Length | 10.67mm |
| Width | 9.65mm |
| Height | 4.58mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.3V |
| Automotive Standard | AEC-Q101 |
Related links
- N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NVB082N65S3F
- N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F
- N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK onsemi FCB070N65S3
- N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK onsemi NVB150N65S3F
- N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK onsemi NVB190N65S3F
- N-Channel MOSFET, 36 A, 650 V, 3-Pin D2PAK onsemi NTB095N65S3HF
- N-Channel MOSFET Transistor & Diode, 24 A, 650 V, 3-Pin D2PAK...
- N-Channel MOSFET, 30 A, 650 V, 3-Pin D2PAK onsemi NTB110N65S3HF