onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

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Subtotal (1 tube of 50 units)*

£121.30

(exc. VAT)

£145.55

(inc. VAT)

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50 - 50£2.426£121.30
100 +£2.305£115.25

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RS Stock No.:
178-4258
Mfr. Part No.:
NTPF082N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.9mm

Number of Elements per Chip

1

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.12mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger

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