onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTPF110N65S3HF
- RS Stock No.:
- 186-1441
- Mfr. Part No.:
- NTPF110N65S3HF
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£7.75
(exc. VAT)
£9.30
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,998 unit(s) shipping from 19 February 2026
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £3.875 | £7.75 |
20 - 198 | £3.34 | £6.68 |
200 + | £2.895 | £5.79 |
*price indicative
- RS Stock No.:
- 186-1441
- Mfr. Part No.:
- NTPF110N65S3HF
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 110 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 240 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Width | 4.9mm | |
Number of Elements per Chip | 1 | |
Length | 10.63mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 62 nC @ 10 V | |
Forward Diode Voltage | 1.3V | |
Height | 16.12mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.9mm | ||
Number of Elements per Chip 1 | ||
Length 10.63mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 62 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 16.12mm | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
Ultra Low Gate Charge (Typ. Qg = 62 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 98 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Related links
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-220 NTP110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL110N65S3F
- onsemi NTP095N N-Channel MOSFET 650 V, 3-Pin TO-220 NTP095N65S3H
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NVHL110N65S3F
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NTB110N65S3HF
- onsemi NTHL095N N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL095N65S3H
- onsemi SUPERFET III N-Channel MOSFET 650 V, 3-Pin TO-220 NTPF095N65S3H
- onsemi SUPERFET III N-Channel MOSFET 650 V, 8-Pin TDFN4 NTMT095N65S3H