onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NVHL110N65S3F

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RS Stock No.:
186-1285
Mfr. Part No.:
NVHL110N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.82mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
PPAP Capable
Typ. RDS(on) = 93 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter

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