onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NVHL040N65S3F

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Packaging Options:
RS Stock No.:
186-1516
Mfr. Part No.:
NVHL040N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

446 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

15.87mm

Maximum Operating Temperature

+150 °C

Width

4.82mm

Typical Gate Charge @ Vgs

153 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Height

20.82mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
PPAP Capable
Typ. RDS(on) = 32 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter

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