N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi NVHL040N65S3F
- RS Stock No.:
- 186-1516
- Mfr. Part No.:
- NVHL040N65S3F
- Brand:
- onsemi
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Price Each
£11.08
(exc. VAT)
£13.30
(inc. VAT)
Units | Per unit |
|---|---|
| 1 - 9 | £11.08 |
| 10 - 99 | £9.54 |
| 100 - 249 | £7.93 |
| 250 - 499 | £7.44 |
| 500 + | £7.18 |
- RS Stock No.:
- 186-1516
- Mfr. Part No.:
- NVHL040N65S3F
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Non Compliant
Product Details
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
PPAP Capable
Typ. RDS(on) = 32 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
PPAP Capable
Typ. RDS(on) = 32 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 446 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Length | 15.87mm |
| Typical Gate Charge @ Vgs | 153 nC @ 10 V |
| Width | 4.82mm |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Height | 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.3V |
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