N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
- RS Stock No.:
- 172-4620
- Mfr. Part No.:
- FCH040N65S3-F155
- Brand:
- onsemi
900 In stock - FREE next working day delivery available
Price Each
£9.85
(exc. VAT)
£11.82
(inc. VAT)
Units | Per unit |
|---|---|
| 1 - 24 | £9.85 |
| 25 - 74 | £9.04 |
| 75 - 149 | £8.36 |
| 150 - 224 | £7.73 |
| 225 + | £7.41 |
- RS Stock No.:
- 172-4620
- Mfr. Part No.:
- FCH040N65S3-F155
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 650 V |
| Series | FCH040N65S3 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 417 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 136 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Width | 4.82mm |
| Length | 15.87mm |
| Minimum Operating Temperature | -55 °C |
| Height | 20.82mm |
| Forward Diode Voltage | 1.2V |
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