onsemi FCH023N65S3 N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
172-4612
Mfr. Part No.:
FCH023N65S3-F155
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

FCH023N65S3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

15.87mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

222 nC @ 10 V

Width

4.82mm

Forward Diode Voltage

1.2V

Height

20.82mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC

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