SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
PPAP Capable
Typ. RDS(on) = 27.4 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter

Units	Per unit
1 - 9	£15.79
10 - 99	£13.61
100 +	£11.80

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	75 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	27.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	595 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Typical Gate Charge @ Vgs	227 nC @ 10 V
	Length	15.87mm
	Width	4.82mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Automotive Standard	AEC-Q101
	Height	20.82mm
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 75 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 27.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 595 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Typical Gate Charge @ Vgs 227 nC @ 10 V
	Length 15.87mm
	Width 4.82mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Automotive Standard AEC-Q101
	Height 20.82mm
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F

Related links

Be the first to know about our latest products and services