onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL110N65S3F

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Subtotal (1 tube of 30 units)*

£105.36

(exc. VAT)

£126.42

(inc. VAT)

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Units
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Per Tube*
30 - 90£3.512£105.36
120 - 240£3.073£92.19
270 - 480£2.993£89.79
510 - 990£2.919£87.57
1020 +£2.845£85.35

*price indicative

RS Stock No.:
178-4256
Mfr. Part No.:
NTHL110N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

58 nC @ 10 V

Width

4.82mm

Length

15.87mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

20.82mm

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance


Typ. RDS(on) = 98 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar / UPS

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