onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL110N65S3F
- RS Stock No.:
- 178-4486
- Mfr. Part No.:
- NTHL110N65S3F
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£10.34
(exc. VAT)
£12.40
(inc. VAT)
FREE delivery for orders over £50.00
- 414 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £5.17 | £10.34 |
20 + | £4.455 | £8.91 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (In a Tube of 30)
£3.512
(exc. VAT)
£4.214
(inc. VAT)
- RS Stock No.:
- 178-4486
- Mfr. Part No.:
- NTHL110N65S3F
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 110 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 240 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
Length | 15.87mm | |
Width | 4.82mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.3V | |
Height | 20.82mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Length 15.87mm | ||
Width 4.82mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.3V | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 98 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar / UPS
Related links
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL110N65S3F
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NVHL110N65S3F
- onsemi NTHL095N N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL095N65S3H
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-220 NTP110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-220 NTPF110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NTB110N65S3HF
- onsemi NTH4LN095N N-Channel MOSFET 650 V, 4-Pin TO-247-4 NTH4LN095N65S3H
- onsemi NTP095N N-Channel MOSFET 650 V, 3-Pin TO-220 NTP095N65S3H