onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP110N65S3HF

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£3.83

(exc. VAT)

£4.596

(inc. VAT)

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Packaging Options:
RS Stock No.:
186-1355
Mfr. Part No.:
NTP110N65S3HF
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

62 nC @ 10 V

Width

4.7mm

Height

16.3mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 62 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 98 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS

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