onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK NVB082N65S3F
- RS Stock No.:
- 186-1281
- Mfr. Part No.:
- NVB082N65S3F
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 186-1281
- Mfr. Part No.:
- NVB082N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 82 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 313 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Height | 4.58mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 313 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 81 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Height 4.58mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
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