- RS Stock No.:
- 189-0252
- Mfr. Part No.:
- NTB095N65S3HF
- Brand:
- onsemi
Available to back order for despatch 05/09/2024
Added
Price Each (On a Reel of 800)
£2.86
(exc. VAT)
£3.43
(inc. VAT)
Units | Per unit | Per Reel* |
800 + | £2.86 | £2,288.00 |
*price indicative |
- RS Stock No.:
- 189-0252
- Mfr. Part No.:
- NTB095N65S3HF
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 66 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Ultra Low Gate Charge (Typ. Qg = 66 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 36 A |
Maximum Drain Source Voltage | 650 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 95 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 272 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 66 nC @ 10 V |
Number of Elements per Chip | 1 |
Width | 9.65mm |
Maximum Operating Temperature | +150 °C |
Height | 4.58mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.3V |