onsemi N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- RS Stock No.:
- 195-2667
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
£27.61
(exc. VAT)
£33.13
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 240 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £2.761 | £27.61 |
| 100 - 240 | £2.38 | £23.80 |
| 250 + | £2.063 | £20.63 |
*price indicative
- RS Stock No.:
- 195-2667
- Mfr. Part No.:
- NVB190N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Length 10.67mm | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
Related links
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 NTPF190N65S3HF
- onsemi NTHL N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL190N65S3HF
- onsemi NTHL N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP65N150M9
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R107M1HXKSA1