onsemi NTMT190N N-Channel MOSFET, 20 A, 650 V, 4-Pin PQFN4 8 x 8 NTMT190N65S3HF
- RS Stock No.:
- 221-6739
- Mfr. Part No.:
- NTMT190N65S3HF
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6739
- Mfr. Part No.:
- NTMT190N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 650 V | |
Series | NTMT190N | |
Package Type | PQFN4 8 x 8 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 0.19 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Series NTMT190N | ||
Package Type PQFN4 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.19 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 316 pF
100% avalanche tested
low effective output capacitance 316 pF
100% avalanche tested
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