onsemi N-Channel MOSFET, 10 A, 650 V, 4-Pin PQFN4 FCMT360N65S3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
195-2502
Mfr. Part No.:
FCMT360N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

PQFN4

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Length

8mm

Width

8mm

Number of Elements per Chip

1

Height

1.05mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

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