onsemi N-Channel MOSFET, 24 A, 650 V, 4-Pin PQFN4 FCMT125N65S3

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Packaging Options:
RS Stock No.:
185-9219
Mfr. Part No.:
FCMT125N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

PQFN4

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

8mm

Width

8mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.05mm

Forward Diode Voltage

1.2V

Non Compliant

COO (Country of Origin):
PH
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 49 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)
Optimized Capacitance
Typ. RDS(on) = 100 mΩ
Internal Gate Resistance: 0.5 Ω
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
LED Lighting
Adapter

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