onsemi N-Channel MOSFET, 10 A, 650 V, 4-Pin PQFN4 FCMT360N65S3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

£33.12

(exc. VAT)

£39.74

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 2,980 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 180£1.656£33.12
200 - 480£1.428£28.56
500 +£1.238£24.76

*price indicative

Packaging Options:
RS Stock No.:
195-2503
Mfr. Part No.:
FCMT360N65S3
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

PQFN4

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

8mm

Length

8mm

Number of Elements per Chip

1

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

Related links