Microchip N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 LND01K1-G
- RS Stock No.:
- 178-5338
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 178-5338
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 330 mA | |
| Maximum Drain Source Voltage | 9 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +0.6 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.75mm | |
| Maximum Operating Temperature | +125 °C | |
| Length | 3.05mm | |
| Height | 1.3mm | |
| Minimum Operating Temperature | -25 °C | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 330 mA | ||
Maximum Drain Source Voltage 9 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +0.6 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.75mm | ||
Maximum Operating Temperature +125 °C | ||
Length 3.05mm | ||
Height 1.3mm | ||
Minimum Operating Temperature -25 °C | ||
LND01 N-Channel MOSFET Transistors
The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation
MOSFET Transistors, Microchip
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