Infineon HEXFET N-Channel MOSFET, 180 A, 40 V, 3-Pin DPAK IRFR7440TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

140 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Width

2.39mm

Typical Gate Charge @ Vgs

89 nC @ 20 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

6.22mm