Infineon OptiMOS™ N-Channel MOSFET, 300 A, 30 V, 8-Pin HSOF-8 IPT004N03LATMA1

Subtotal (1 reel of 2000 units)*

£4,240.00

(exc. VAT)

£5,080.00

(inc. VAT)

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2000 +£2.12£4,240.00

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RS Stock No.:
168-5941
Mfr. Part No.:
IPT004N03LATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

30 V

Package Type

HSOF-8

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

500 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

300 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

10.58mm

Length

10.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

252 nC @ 10 V

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

2.4mm

COO (Country of Origin):
MY

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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