Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1

RS Stock No.:: 171-1991
Mfr. Part No.:: IPT015N10N5ATMA1
Brand:: Infineon

Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1

Subtotal (1 pack of 5 units)*

£24.35

(exc. VAT)

£29.20

(inc. VAT)

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In Stock

205 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 +	£4.87	£24.35

*price indicative

RS Stock No.:: 171-1991
Mfr. Part No.:: IPT015N10N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	300 A
	Maximum Drain Source Voltage	100 V
	Package Type	HSOF-8
	Series	OptiMOS™ 5
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.8V
	Minimum Gate Threshold Voltage	2.2V
	Maximum Power Dissipation	375 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Width	10.58mm
	Typical Gate Charge @ Vgs	169 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.1mm
	Minimum Operating Temperature	-55 °C
	Height	2.4mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 300 A
	Maximum Drain Source Voltage 100 V
	Package Type HSOF-8
	Series OptiMOS™ 5
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.8V
	Minimum Gate Threshold Voltage 2.2V
	Maximum Power Dissipation 375 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Width 10.58mm
	Typical Gate Charge @ Vgs 169 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.1mm
	Minimum Operating Temperature -55 °C
	Height 2.4mm
	Forward Diode Voltage 1.2V

Infineon MOSFET

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)

Applications

• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC