Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

RS Stock No.:: 171-1991
Mfr. Part No.:: IPT015N10N5ATMA1
Brand:: Infineon

Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

Subtotal (1 pack of 5 units)*

£24.35

(exc. VAT)

£29.20

(inc. VAT)

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In Stock

205 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 +	£4.87	£24.35

*price indicative

RS Stock No.:: 171-1991
Mfr. Part No.:: IPT015N10N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Series	IPT015N10N5
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	169nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Length	10.1mm
	Standards/Approvals	No
	Height	2.4mm
	Width	10.58 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Series IPT015N10N5
	Package Type HSOF
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 169nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Length 10.1mm
	Standards/Approvals No
	Height 2.4mm
	Width 10.58 mm
	Automotive Standard No

Infineon MOSFET

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• 100% avalanche tested

• Excellent gate charge x RDS (on) product (FOM)

• Halogen free

• Highest system efficiency

• Ideal for high switching frequency

• Increased power density

• Lead (Pb) free plating

• Low voltage overshoot

• Operating temperature ranges between -55°C and 175°C

• Optimized for synchronous rectification

• Output capacitance reduction of up to 44%

• RDS (on) reduction of up to 44%

• Very low on resistance RDS (on)

Applications

• Adapter

• Light electric vehicles

• Low voltage drives

• Server power supplies

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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