Infineon OptiMOS™ N-Channel MOSFET, 300 A, 30 V, 8-Pin HSOF-8 IPT004N03LATMA1
- RS Stock No.:
- 130-0929
- Mfr. Part No.:
- IPT004N03LATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£6.24
(exc. VAT)
£7.48
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8,072 unit(s) ready to ship
- Plus 999,991,926 unit(s) shipping from 26 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £3.12 | £6.24 |
*price indicative
- RS Stock No.:
- 130-0929
- Mfr. Part No.:
- IPT004N03LATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 500 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 300 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 252 nC @ 10 V | |
| Length | 10.1mm | |
| Width | 10.58mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Height | 2.4mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 500 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 300 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 252 nC @ 10 V | ||
Length 10.1mm | ||
Width 10.58mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
Height 2.4mm | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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