Infineon OptiMOS SiC N-Channel MOSFET, 610 A, 40 V, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

Subtotal (1 reel of 5000 units)*

£9,880.00

(exc. VAT)

£11,855.00

(inc. VAT)

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Per unit
Per Reel*
5000 +£1.976£9,880.00

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RS Stock No.:
284-925
Mfr. Part No.:
IQD005N04NM6CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

610 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS

Package Type

PG-TTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a top choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.

Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems

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