Infineon OptiMOS SiC N-Channel MOSFET, 273 A, 100 V, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1

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RS Stock No.:
284-934
Mfr. Part No.:
IQD020N10NM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor represents a significant advancement in MOSFET technology tailored for demanding industrial applications. This robust transistor is designed to deliver exceptional performance with superior thermal management, making it an ideal choice for systems requiring efficient energy conversion and management. With a voltage rating of 100V and an impressive low on resistance, this product provides enhanced power handling capabilities while maintaining low energy losses. Its reliable performance is also backed by extensive validation, ensuring assured functionality in various operational conditions.

N channel design for efficient switching
Low on resistance minimizes power loss
Exceptional thermal resistance extends lifespan
100% avalanche tested for reliability
RoHS compliant for eco friendliness
Halogen free material for environmental standards
Reliable in high temperature environments

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