Infineon OptiMOS SiC N-Channel MOSFET, 151 A, 60 V, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1

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RS Stock No.:
284-950
Mfr. Part No.:
IQE022N06LM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is a high performance power transistor is engineered for demanding power management applications. It showcases advanced OptiMOS 5 technology, optimised for synchronous rectification in switched mode power supplies. The innovative design ensures very low on resistance, offering superior thermal characteristics that enhance reliability and efficiency. This product, rated at 60V, is especially suitable for industrial applications due to its robust avalanche testing and compliance with RoHS standards. With its logic level N channel design, it simplifies integration into your circuit while maintaining outstanding operational performance.

Optimised for high efficiency power conversion
Logic level N channel for easy interfacing
100% avalanche tested for reliability
RoHS compliant for environmental safety
Halogen free and supporting sustainability standards
JEDEC validated for industrial applications
Superior thermal management extends lifespan
High continuous drain current for demanding loads

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