Infineon OptiMOS SiC N-Channel MOSFET, 789 A, 25 V, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1

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RS Stock No.:
284-941
Mfr. Part No.:
IQDH35N03LM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

789 A

Maximum Drain Source Voltage

25 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor exemplifies cutting edge technology in MOSFET performance, designed primarily for high efficiency switching applications. This transistor operates at a voltage of 25V and is tailored for unparalleled thermal management and low on resistance, ensuring superior efficiency in demanding environments. Manufactured with advanced materials and adhering to the highest industry standards, it stands out for its capability to handle high current loads while maintaining low energy loss. The unique design supports robust thermal resistance, facilitating effective heat dissipation, even in compact layouts.

N channel technology for fast switching
Low on resistance reduces energy losses
Superior thermal resistance for reliability
Fully qualified for industrial durability
Avalanche tested for consistent performance
Pb free plating supports sustainability
Halogen free construction meets safety standards
Compact design for easy integration

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