Infineon OptiMOS SiC N-Channel MOSFET, 445 A, 60 V, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

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£6.26

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£7.52

(inc. VAT)

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2 - 18£3.13£6.26
20 - 198£2.815£5.63
200 - 998£2.60£5.20
1000 - 1998£2.41£4.82
2000 +£2.16£4.32

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Packaging Options:
RS Stock No.:
284-929
Mfr. Part No.:
IQD009N06NM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

445 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.

Very low on resistance improves efficiency
Enhanced thermal resistance for performance
Optimised for continuous and pulsed currents
Comprehensive avalanche ratings for durability
RoHS and halogen free compliant
Fully qualified per JEDEC standards
Significant savings on power dissipation
Flexible temperature range for diverse environments

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