Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

RS Stock No.:: 284-928
Mfr. Part No.:: IQD009N06NM5CGATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

Subtotal (1 reel of 5000 units)*

£10,275.00

(exc. VAT)

£12,330.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

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Units	Per unit	Per Reel*
5000 +	£2.055	£10,275.00

*price indicative

RS Stock No.:: 284-928
Mfr. Part No.:: IQD009N06NM5CGATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	445A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	PG-TTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	0.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	333W
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, IEC61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 445A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type PG-TTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 0.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 333W
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IQD009N06NM5CGATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With Advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The Compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.

Very low on resistance improves efficiency

Enhanced thermal resistance for performance

Optimised for continuous and pulsed currents

Comprehensive avalanche ratings for durability

RoHS and halogen free compliant

Fully qualified per JEDEC standards

Significant savings on power dissipation

Flexible temperature range for diverse environments