Infineon OptiMOS SiC N-Channel MOSFET, 789 A, 25 V, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1

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RS Stock No.:
284-939
Mfr. Part No.:
IQDH29NE2LM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

789 A

Maximum Drain Source Voltage

25 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an optimos 5 Power Transistor is engineered to deliver exceptional performance in various industrial applications. This cutting edge N channel transistor operates at a maximum voltage of 25V, offering impressive low on resistance and enhanced thermal management. Its impressive 789A continuous drain current capability allows it to perform efficiently even under rigorous conditions. Built to be reliable, it is fully qualified according to JEDEC standards ensuring longevity and endurance in everyday use.

Advanced thermal resistance for longevity
Zero gate voltage drain current minimizes energy waste
Robust avalanche energy handling for reliability
Pb free and RoHS compliant for eco friendliness
Optimized for logic level applications

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