Infineon OptiMOS SiC N-Channel MOSFET, 323 A, 80 V, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

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Subtotal (1 pack of 2 units)*

£6.49

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£7.788

(inc. VAT)

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2 - 18£3.245£6.49
20 - 198£2.92£5.84
200 - 998£2.695£5.39
1000 - 1998£2.50£5.00
2000 +£2.24£4.48

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Packaging Options:
RS Stock No.:
284-932
Mfr. Part No.:
IQD016N08NM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

323 A

Maximum Drain Source Voltage

80 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.

N channel for efficient power conduction
Low on resistance minimizes power loss
Superior thermal management for longevity
100% avalanche tested for stability
Pb free and RoHS compliant
Halogen free construction for safety
JEDEC qualified for industrial applications

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