N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
- RS Stock No.:
- 168-4494
- Mfr. Part No.:
- IXFN60N80P
- Brand:
- IXYS
Available to back order for despatch 26/03/2025
Price Each (In a Tube of 10)
£32.34
(exc. VAT)
£38.81
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 10 + | £32.34 | £323.40 |
*price indicative
- RS Stock No.:
- 168-4494
- Mfr. Part No.:
- IXFN60N80P
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 53 A |
| Maximum Drain Source Voltage | 800 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 25.42mm |
| Length | 38.23mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |
Related links
- N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
- N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3
- N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227 IXYS IXTN46N50L
- N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXYS IXFN48N60P
- N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXYS IXFN36N100
- N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2
- N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
- N-Channel MOSFET, 420 A, 100 V, 4-Pin SOT-227 IXYS IXFN420N10T