IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

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Subtotal (1 tube of 10 units)*

£304.81

(exc. VAT)

£365.77

(inc. VAT)

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  • 380 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +£30.481£304.81

*price indicative

RS Stock No.:
168-4494
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

800 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

38.23mm

Transistor Material

Si

Width

25.42mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

250 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.6mm

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