IXYS HiperFET, Polar N-Channel MOSFET, 61 A, 500 V, 4-Pin SOT-227 IXFN64N50P
- RS Stock No.:
- 920-0789
- Mfr. Part No.:
- IXFN64N50P
- Brand:
- IXYS
Bulk discount available
Subtotal (1 tube of 10 units)*
£202.24
(exc. VAT)
£242.69
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 20 unit(s) shipping from 09 September 2025
- Plus 20 unit(s) shipping from 30 September 2025
- Plus 30 unit(s) shipping from 23 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | £20.224 | £202.24 |
| 20 - 30 | £19.213 | £192.13 |
| 40 - 90 | £18.606 | £186.06 |
| 100 - 190 | £17.588 | £175.88 |
| 200 + | £17.148 | £171.48 |
*price indicative
- RS Stock No.:
- 920-0789
- Mfr. Part No.:
- IXFN64N50P
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 61 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Polar | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 85 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Maximum Power Dissipation | 700 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 25.42mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 38.23mm | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.6mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type SOT-227 | ||
Series HiperFET, Polar | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Power Dissipation 700 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 25.42mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 38.23mm | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.6mm | ||
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