IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P

View all MOSFETs

Subtotal (1 tube of 10 units)*

£275.12

(exc. VAT)

£330.14

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 50 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +£27.512£275.12

*price indicative

RS Stock No.:
920-0748
Mfr. Part No.:
IXFN140N30P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

185 nC @ 10 V

Length

38.2mm

Number of Elements per Chip

1

Width

25.07mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links