IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 10 units)*

£203.05

(exc. VAT)

£243.66

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 999,999,990 unit(s) shipping from 27 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 - 10£20.305£203.05
20 - 40£19.29£192.90
50 +£18.275£182.75

*price indicative

RS Stock No.:
168-4467
Mfr. Part No.:
IXFN102N30P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.42mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Transistor Material

Si

Typical Gate Charge @ Vgs

224 nC @ 10 V

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links