IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P
- RS Stock No.:
- 193-464
- Distrelec Article No.:
- 302-53-358
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
Save 9% when you buy 5 units
Subtotal (1 unit)*
£23.20
(exc. VAT)
£27.84
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £23.20 |
| 2 - 4 | £22.04 |
| 5 + | £20.90 |
*price indicative
- RS Stock No.:
- 193-464
- Distrelec Article No.:
- 302-53-358
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 86 A | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Polar | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 570 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 224 nC @ 10 V | |
| Length | 38.23mm | |
| Width | 25.42mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.6mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type SOT-227 | ||
Series HiperFET, Polar | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 570 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 224 nC @ 10 V | ||
Length 38.23mm | ||
Width 25.42mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.6mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 86 A 4-Pin SOT-227 IXFN102N30P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N30P
- IXYS HiperFET 61 A 4-Pin SOT-227 IXFN64N50P
- IXYS HiperFET 66 A 4-Pin SOT-227 IXFN80N50P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N20P
- IXYS HiperFET 40 A 4-Pin SOT-227 IXFN48N60P
- IXYS HiperFET 150 A 4-Pin SOT-227 IXFN180N15P
- IXYS HiperFET 53 A 4-Pin SOT-227 IXFN60N80P