IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£36.25

(exc. VAT)

£43.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 68 unit(s) ready to ship
  • Plus 5 unit(s) ready to ship from another location
  • Plus 387 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£36.25
2 - 4£31.14
5 - 9£30.32
10 - 19£29.54
20 +£28.80

*price indicative

RS Stock No.:
194-350
Distrelec Article No.:
302-53-376
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

250 nC @ 10 V

Transistor Material

Si

Width

25.42mm

Length

38.23mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links