IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

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Subtotal (1 unit)*

£32.21

(exc. VAT)

£38.65

(inc. VAT)

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  • 68 unit(s) ready to ship
  • Plus 9 unit(s) ready to ship from another location
  • Plus 417 unit(s) shipping from 09 September 2025
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Per unit
1 - 1£32.21
2 - 4£31.08
5 - 9£30.26
10 - 19£29.49
20 +£28.75

*price indicative

RS Stock No.:
194-350
Distrelec Article No.:
302-53-376
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

250 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

38.23mm

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

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