onsemi PowerTrench N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T
- RS Stock No.:
- 166-2978
- Mfr. Part No.:
- FDPF3860T
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£17.45
(exc. VAT)
£20.95
(inc. VAT)
FREE delivery for orders over £50.00
- Final 950 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 + | £0.349 | £17.45 |
*price indicative
- RS Stock No.:
- 166-2978
- Mfr. Part No.:
- FDPF3860T
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220F | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 38 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 33.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Width | 4.9mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 16.07mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220F | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 33.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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