onsemi QFET N-Channel MOSFET, 1.7 A, 100 V, 3-Pin SOT-223 FQT7N10LTF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
166-1755
Mfr. Part No.:
FQT7N10LTF
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

4.6 nC @ 5 V

Length

6.5mm

Width

3.56mm

Number of Elements per Chip

1

Height

1.6mm

Minimum Operating Temperature

-55 °C

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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