onsemi QFET N-Channel MOSFET, 850 mA, 200 V, 3-Pin SOT-223 FQT4N20LTF
- RS Stock No.:
- 671-1065
- Mfr. Part No.:
- FQT4N20LTF
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£0.85
(exc. VAT)
£1.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 3,855 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £0.17 | £0.85 |
*price indicative
- RS Stock No.:
- 671-1065
- Mfr. Part No.:
- FQT4N20LTF
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 850 mA | |
Maximum Drain Source Voltage | 200 V | |
Series | QFET | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.35 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 6.5mm | |
Width | 3.56mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 4 nC @ 5 V | |
Maximum Operating Temperature | +150 °C | |
Height | 1.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 850 mA | ||
Maximum Drain Source Voltage 200 V | ||
Series QFET | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.35 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Width 3.56mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 4 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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