onsemi QFET P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 FQT5P10TF

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Subtotal (1 pack of 5 units)*

£3.03

(exc. VAT)

£3.635

(inc. VAT)

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Last RS stock
  • 15 left, ready to ship
  • Final 14,585 unit(s) shipping from 09 October 2025
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Per unit
Per Pack*
5 - 45£0.606£3.03
50 - 95£0.522£2.61
100 - 495£0.452£2.26
500 - 995£0.398£1.99
1000 +£0.362£1.81

*price indicative

Packaging Options:
RS Stock No.:
671-1068
Mfr. Part No.:
FQT5P10TF
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

QFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

6.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Width

3.56mm

Height

1.6mm

Minimum Operating Temperature

-55 °C

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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