onsemi QFET Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223 FQT5P10TF

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Subtotal (1 pack of 5 units)*

£3.03

(exc. VAT)

£3.635

(inc. VAT)

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Last RS stock
  • 5 left, ready to ship
  • Final 14,585 unit(s) shipping from 02 January 2026
Units
Per unit
Per Pack*
5 - 45£0.606£3.03
50 - 95£0.522£2.61
100 - 495£0.452£2.26
500 - 995£0.398£1.99
1000 +£0.362£1.81

*price indicative

Packaging Options:
RS Stock No.:
671-1068
Mfr. Part No.:
FQT5P10TF
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Series

QFET

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

6.3nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

-4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.6mm

Length

6.5mm

Width

3.56 mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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