Infineon HEXFET N-Channel MOSFET, 235 A, 30 V, 3-Pin D2PAK AUIRF2903ZS
- RS Stock No.:
- 165-7675
- Mfr. Part No.:
- AUIRF2903ZS
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-7675
- Mfr. Part No.:
- AUIRF2903ZS
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 235 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 231 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 235 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 231 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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