Name: Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB AUIRL3705N
Brand: Infineon
SKU: 748-1894
Price: 2.90 GBP
Availability: Discontinued

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	89 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	18 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Typical Gate Charge @ Vgs	98 nC @ 5 V
	Maximum Operating Temperature	+175 °C
	Length	10.66mm
	Number of Elements per Chip	1
	Width	4.82mm
	Transistor Material	Si
	Height	16.51mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 89 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 18 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Typical Gate Charge @ Vgs 98 nC @ 5 V
	Maximum Operating Temperature +175 °C
	Length 10.66mm
	Number of Elements per Chip 1
	Width 4.82mm
	Transistor Material Si
	Height 16.51mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB AUIRL3705N

Automotive N-Channel Power MOSFET, Infineon

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