Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263

Bulk discount available

Subtotal (1 reel of 800 units)*

£609.60

(exc. VAT)

£731.20

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 - 800£0.762£609.60
1600 +£0.724£579.20

*price indicative

RS Stock No.:
217-2635
Mfr. Part No.:
IRL3705NSTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

89A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

10mΩ

Typical Gate Charge Qg @ Vgs

98nC

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

17.79mm

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

Related links