Name: Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZS
Brand: Infineon
SKU: 165-7623
Price: 0.95 GBP
Availability: Discontinued

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	110 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	6.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	11.3mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	76 nC @ 10 V
	Length	10.67mm
	Number of Elements per Chip	1
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 110 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 6.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 11.3mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 76 nC @ 10 V
	Length 10.67mm
	Number of Elements per Chip 1
	Height 4.83mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZS

Automotive N-Channel Power MOSFET, Infineon

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